Single Electron Transistor and its Simulation methods

Single-electron transistor (SET) is a key element of current research area of nanotechnology which can offer low power consumption and high operating speed. Single electron transistor [SET] is a new nanoscaled switching device because single-electron transistor retains its scalability even on an atomic scale and besides this; it can control the motion of a single electron. The goal of this paper is to discuss about the basic physics of nanoelectronic device ‘Single electron transistor [SET]’ which is capable of controlling the transport of only one electron and focuses on some basic device characteristics like Orthodox theory ,tunneling effect ,Coulomb blockade ,Quantum Dot & ‘Coulomb staircase’ on which this Single electron transistor [SET] works. Various simulation methodology of the single electron transistor is discussed along with the tools available like Spice, SIMON, SECS etc . The physics underlying the operation of SET is explained, a brief history of its invention is presented.